Non-volatile resistive memory cells

Non-volatile resistive memory cells

Examples of the present disclosure include non-volatile resistive memory cells and methods of forming the same. An example of a non-volatile resistive memory cell includes a first portion of the non-volatile resistive memory cell formed as a vertically-extending structure on a first electrode, where...

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Bibliographische Detailangaben
Hauptverfasser: Park, Jinwon, Williams, R. Stanley, Hyejung, Choi, Moon, Jiwon, Joo, Moonsig, Kim, Jeongtae, Sohn, Yongsun, Cho, Hans S, Lee, Changgoo, Nickel, Janice H, Roh, Jaesung
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Examples of the present disclosure include non-volatile resistive memory cells and methods of forming the same. An example of a non-volatile resistive memory cell includes a first portion of the non-volatile resistive memory cell formed as a vertically-extending structure on a first electrode, where the first portion comprises at least one memristive material across a width of the vertically-extending structure. The non-volatile resistive memory cell also includes a second portion formed as a vertically-extending memristive material structure on at least one sidewall of the first portion.