Semiconductor devices with asymmetric halo implantation and method of manufacture

Semiconductor devices with asymmetric halo implantation and method of manufacture

A method includes forming a hardmask over one or more gate structures. The method further includes forming a photoresist over the hardmask. The method further includes forming an opening in the photoresist over at least one of the gate structures. The method further includes stripping the hardmask t...

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Hauptverfasser: Rankin, Jed H, Holmes, Eva S, Bhagat, Darshana N, Dunbar, Thomas J, Lim, Yen L
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator Rankin, Jed H
Holmes, Eva S
Bhagat, Darshana N
Dunbar, Thomas J
Lim, Yen L
description A method includes forming a hardmask over one or more gate structures. The method further includes forming a photoresist over the hardmask. The method further includes forming an opening in the photoresist over at least one of the gate structures. The method further includes stripping the hardmask that is exposed in the opening and which is over the at least one of the gate structures. The method further includes removing the photoresist. The method further includes providing a halo implant on a side of the least one of the at least one of the gate structures.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Semiconductor devices with asymmetric halo implantation and method of manufacture
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