Cleaning method for semiconductor device fabrication

A method of cleaning a substrate such as semiconductor substrate for IC fabrication is described that includes cleaning the semiconductor substrate with a first mixture of ozone and one of an acid and a base, followed by a second mixture of ozone and the other one of the acid and the base. The clean...

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Bibliographische Detailangaben
Hauptverfasser:	Chen, Chao-Cheng, Chou, Bo-Wei, Wu, Sung-Hsun, Yeh, Ming-Hsi, Jang, Syun-Ming
Format:	Patent
Sprache:	eng
Schlagworte:	ANIMAL AND VEGETABLE OILS, FATS, FATTY SUBSTANCES AND WAXES BASIC ELECTRIC ELEMENTS CANDLES CHEMISTRY CLEANING CLEANING IN GENERAL DETERGENT COMPOSITIONS DETERGENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FATTY ACIDS THEREFROM METALLURGY PERFORMING OPERATIONS PREVENTION OF FOULING IN GENERAL RECOVERY OF GLYCEROL RESIN SOAPS SEMICONDUCTOR DEVICES SOAP OR SOAP-MAKING TRANSPORTING USE OF SINGLE SUBSTANCES AS DETERGENTS
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Beschreibung
Zusammenfassung:	A method of cleaning a substrate such as semiconductor substrate for IC fabrication is described that includes cleaning the semiconductor substrate with a first mixture of ozone and one of an acid and a base, followed by a second mixture of ozone and the other one of the acid and the base. The cleaning mixtures may further include de-ionized water. In an embodiment, the mixture is sprayed onto a heated substrate surface. The acid may be HF; the base may be NH4OH.