Forming a contact layer on a semiconductor body

Forming a contact layer on a semiconductor body

Disclosed is a method. The method includes forming a metal layer on a first surface of a semiconductor body; irradiating the metal layer with particles to move metal atoms from the metal layer into the semiconductor body and form a metal atom containing region in the semiconductor body; and annealin...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Santos Rodriguez, Francisco Javier, Schaeffer, Carsten, Rupp, Roland, Konrath, Jens Peter, Wellenzohn, Guenther, Schulze, Hans-Joachim, Schustereder, Werner
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Disclosed is a method. The method includes forming a metal layer on a first surface of a semiconductor body; irradiating the metal layer with particles to move metal atoms from the metal layer into the semiconductor body and form a metal atom containing region in the semiconductor body; and annealing the semiconductor body. The annealing includes heating at least the metal atom containing region to a temperature of less than 500° C.