Interconnection cells having variable width metal lines and fully-self aligned variable length continuity cuts

A method includes providing a semiconductor structure having a mandrel layer and a hardmask layer disposed above a dielectric layer. A mandrel cell is patterned into the mandrel layer. An opening is etched into the hardmask layer. The opening is self-aligned with a sidewall of the mandrel. A refill layer is disposed over the structure and recessed down to a level that is below a top surface of the hardmask layer to form an opening plug that covers a bottom of the opening. The mandrel cell is utilized to form a metal line cell into the dielectric layer, the metal line cell having metal lines and a minimum line cell pitch. The opening plug is utilized to form a continuity cut in a metal line of the metal line cell. The continuity cut has a length that is larger than the minimum line cell pitch.