INSTALLATION FOR THE PREPARATION OF PURE SILICON INGOT FROM SILICON DIOXIDE

The invention relates to semiconductors, namely - to an installation design for the preparation of pure silicon ingot from silicon dioxide, treatment of reduced silicon to 99.999 mass % of purity and crystallization of pure silicon ingot of trademark "sunny". The installation for the prepa...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	MARONCHUK IHOR YEVHENOVYCH, KULIUTKINA TAMARA FATYKHIVNA
Format:	Patent
Sprache:	eng ; rus ; ukr
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOUNDS THEREOF DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL INORGANIC CHEMISTRY METALLURGY NON-METALLIC ELEMENTS SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!