INSTALLATION FOR THE PREPARATION OF PURE SILICON INGOT FROM SILICON DIOXIDE

The invention relates to semiconductors, namely - to an installation design for the preparation of pure silicon ingot from silicon dioxide, treatment of reduced silicon to 99.999 mass % of purity and crystallization of pure silicon ingot of trademark "sunny". The installation for the preparation of silicon from silicon dioxide contains a reactor in a form of metal chamber, resistance furnace in it for the creation of isothermal conditions to 1200 °C, crucible, revolving about its axis for formation of flow of silicon solution in low-melting metal melt, revolving to the opposite from crucible side, cooled siliceous fuse, on which crystallization of pure silicon ingot is carried out, device for loading of expendable components (silicon dioxide and aluminium), where aluminothermic reduction of silicon dioxide, solving of formed silicon in low-melting metal melt, agitation by mixer, removal by forcer of the obtained low-melting metal melt, saturated by silicon to the crucible and low-melting metal melt poor of silicon from the crucible alternatively to the stated device for loading, containing the body with inlet for loading of the stated expendable components and removal of slags, and also tank with great many holes, which is connected and moved along the body of the device for loading, providing extraction of scaly crystals of pure silicon, formed in solution-melt after the finishing of the process for pure silicon ingot growth by its vertical movement along the body of the device for loading of expendable components are carried out. The invention provides quasicontinuous process for the preparation of pure silicon ingot by its reduction by aluminium from silicon dioxide, its treatment in solution of low-melting metal melt from group Ga, Sn, Bi, Pb, In or alloys based on it and crystallization on fuse of pure silicon ingot of trademark "sunny" with high productivity. Винахід належить до галузі напівпровідників, а саме - до конструкції установки для одержання зливка чистого кремнію з діоксиду кремнію, очищення відновленого кремнію до чистоти 99,999 мас. % та кристалізації зливка чистого кремнію марки "сонячний". Установка для одержання кремнію з діоксиду кремнію містить реактор у вигляді металевої камери, піч опору в ньому для створення ізотермічного режиму до 1200 °С, тигель, який обертається навколо своєї осі для формування потоку розчину кремнію в розплаві легкоплавкого металу, що обертається в протилежну з тиглем сторону, охолоджувану кремнієву затравку,