METHOD FOR MONOCRYSTAL GROWING
The method for monocrystal growing by Czochralski technique with a control of resistance of nucleus-melt area, wherein a resistance is controlled till the stage of mechanical contact of a nucleus with melting surface, a resistance is controlled at different polarity of a tension, applied to a nucleu...
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| creator | BERINHOV SERHII BORYSOVYCH LISCHUK VITALII YEVHENOVYCH DIATEL MAKSYM MYKHAILOVYCH |
| description | The method for monocrystal growing by Czochralski technique with a control of resistance of nucleus-melt area, wherein a resistance is controlled till the stage of mechanical contact of a nucleus with melting surface, a resistance is controlled at different polarity of a tension, applied to a nucleus relatively to a melt, and value of this resistance is a criterion of distance between a nucleus and melting surface. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_UA78899C2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>UA78899C2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_UA78899C23</originalsourceid><addsrcrecordid>eNrjZJDzdQ3x8HdRcPMPUvD19_N3DooMDnH0UXAP8g_39HPnYWBNS8wpTuWF0twMcm6uIc4euqkF-fGpxQWJyal5qSXxoY7mFhaWls5GxgQVAAAL1iCD</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>METHOD FOR MONOCRYSTAL GROWING</title><source>esp@cenet</source><creator>BERINHOV SERHII BORYSOVYCH ; LISCHUK VITALII YEVHENOVYCH ; DIATEL MAKSYM MYKHAILOVYCH</creator><creatorcontrib>BERINHOV SERHII BORYSOVYCH ; LISCHUK VITALII YEVHENOVYCH ; DIATEL MAKSYM MYKHAILOVYCH</creatorcontrib><description>The method for monocrystal growing by Czochralski technique with a control of resistance of nucleus-melt area, wherein a resistance is controlled till the stage of mechanical contact of a nucleus with melting surface, a resistance is controlled at different polarity of a tension, applied to a nucleus relatively to a melt, and value of this resistance is a criterion of distance between a nucleus and melting surface.</description><language>eng</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; CHEMISTRY ; CRYSTAL GROWTH ; METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>2007</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20070425&DB=EPODOC&CC=UA&NR=78899C2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20070425&DB=EPODOC&CC=UA&NR=78899C2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>BERINHOV SERHII BORYSOVYCH</creatorcontrib><creatorcontrib>LISCHUK VITALII YEVHENOVYCH</creatorcontrib><creatorcontrib>DIATEL MAKSYM MYKHAILOVYCH</creatorcontrib><title>METHOD FOR MONOCRYSTAL GROWING</title><description>The method for monocrystal growing by Czochralski technique with a control of resistance of nucleus-melt area, wherein a resistance is controlled till the stage of mechanical contact of a nucleus with melting surface, a resistance is controlled at different polarity of a tension, applied to a nucleus relatively to a melt, and value of this resistance is a criterion of distance between a nucleus and melting surface.</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>CHEMISTRY</subject><subject>CRYSTAL GROWTH</subject><subject>METALLURGY</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2007</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJDzdQ3x8HdRcPMPUvD19_N3DooMDnH0UXAP8g_39HPnYWBNS8wpTuWF0twMcm6uIc4euqkF-fGpxQWJyal5qSXxoY7mFhaWls5GxgQVAAAL1iCD</recordid><startdate>20070425</startdate><enddate>20070425</enddate><creator>BERINHOV SERHII BORYSOVYCH</creator><creator>LISCHUK VITALII YEVHENOVYCH</creator><creator>DIATEL MAKSYM MYKHAILOVYCH</creator><scope>EVB</scope></search><sort><creationdate>20070425</creationdate><title>METHOD FOR MONOCRYSTAL GROWING</title><author>BERINHOV SERHII BORYSOVYCH ; LISCHUK VITALII YEVHENOVYCH ; DIATEL MAKSYM MYKHAILOVYCH</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_UA78899C23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2007</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>CHEMISTRY</topic><topic>CRYSTAL GROWTH</topic><topic>METALLURGY</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>BERINHOV SERHII BORYSOVYCH</creatorcontrib><creatorcontrib>LISCHUK VITALII YEVHENOVYCH</creatorcontrib><creatorcontrib>DIATEL MAKSYM MYKHAILOVYCH</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>BERINHOV SERHII BORYSOVYCH</au><au>LISCHUK VITALII YEVHENOVYCH</au><au>DIATEL MAKSYM MYKHAILOVYCH</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHOD FOR MONOCRYSTAL GROWING</title><date>2007-04-25</date><risdate>2007</risdate><abstract>The method for monocrystal growing by Czochralski technique with a control of resistance of nucleus-melt area, wherein a resistance is controlled till the stage of mechanical contact of a nucleus with melting surface, a resistance is controlled at different polarity of a tension, applied to a nucleus relatively to a melt, and value of this resistance is a criterion of distance between a nucleus and melting surface.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | METHOD FOR MONOCRYSTAL GROWING |
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