METHOD FOR MONOCRYSTAL GROWING

The method for monocrystal growing by Czochralski technique with a control of resistance of nucleus-melt area, wherein a resistance is controlled till the stage of mechanical contact of a nucleus with melting surface, a resistance is controlled at different polarity of a tension, applied to a nucleu...

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Bibliographische Detailangaben
Hauptverfasser:	BERINHOV SERHII BORYSOVYCH, LISCHUK VITALII YEVHENOVYCH, DIATEL MAKSYM MYKHAILOVYCH
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	The method for monocrystal growing by Czochralski technique with a control of resistance of nucleus-melt area, wherein a resistance is controlled till the stage of mechanical contact of a nucleus with melting surface, a resistance is controlled at different polarity of a tension, applied to a nucleus relatively to a melt, and value of this resistance is a criterion of distance between a nucleus and melting surface.