PROCESS FOR PREPARATION OF CRUCIBLE FOR GROWING MONOCRYSTALINE INGOT BY CZOCHRALSKI METHOD

The invention relates to the field of producing monocrystals of semiconductor materials, in particular to preparation of crucibles for growing monocrystals of silicon from the melt by Czochralski method. The proposed process comprises forming barium-containing coating from barium hydroxide on inner...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	BERINHOV SERHII BORYSOVYCH, KULYKOVSKYI EDUARD VOLODYMYROVYCH, SHULHA YURII HRYHOROVYCH
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	The invention relates to the field of producing monocrystals of semiconductor materials, in particular to preparation of crucibles for growing monocrystals of silicon from the melt by Czochralski method. The proposed process comprises forming barium-containing coating from barium hydroxide on inner and/or external surface of heated to the temperature of 100-150 DEGREE C of quartz crucible. The invention allows to improve uniformity and homogeneity of coating which causes increase of yield of suitable product and reduction of shortage in obtaining silicon ingots of monocrystals.