METHOD OF PLASMA-CHEMICAL ETCHING OF POLYSILICON

The proposed method of plasma-chemical etching of polysilicon implies the chemical treatment of the substrate in hexamethyldisalasan vapors, applying photoresist film to the substrate, drying and exposing the photoresist film, developing the nonexposed areas, strengthening the photoresist film, and plasma-chemical etching. The etching is accomplished at the substrate temperature of -25 ... +25 C, using gas mix containing etching gas SF6, halogen-containing gas, which provides forming protecting film at the polysilicon surface, and a gas that reacts with polysilicon and provides the formation of silicon oxide, nitride, or carbide.