METHOD FOR GROWING MONOCRYSTALS K2COXNI1-X(SO4)2.6H2O
A method for growing monocrystals K2COXNI1-X(SO4)2.6H2O comprises the evaporation of precursor solution at room temperature. Способ выращивания монокристаллов K2COXNI1-X(SO4)2.6H2O включает выпаривание исходного раствора при комнатной температуре. Спосіб вирощування монокристалів K2CoxNi1-x(SO4)2·6H...
Gespeichert in:
| Hauptverfasser: | , , , |
|---|---|
| Format: | Patent |
| Sprache: | eng ; rus ; ukr |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | Londar Taras Oleksandrovych Polovynko Ihor Ivanovych Koman Volodymyr Bohdanovych Rykhliuk Serhii Viktorovych |
| description | A method for growing monocrystals K2COXNI1-X(SO4)2.6H2O comprises the evaporation of precursor solution at room temperature.
Способ выращивания монокристаллов K2COXNI1-X(SO4)2.6H2O включает выпаривание исходного раствора при комнатной температуре.
Спосіб вирощування монокристалів K2CoxNi1-x(SO4)2·6H2O включає випаровування вихідного розчину при кімнатній температурі. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_UA66536UU</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>UA66536UU</sourcerecordid><originalsourceid>FETCH-epo_espacenet_UA66536UU3</originalsourceid><addsrcrecordid>eNrjZDD1dQ3x8HdRcPMPUnAP8g_39HNX8PX383cOigwOcfQJVvA2cvaP8PM01I3QCPY30TTSM_Mw8udhYE1LzClO5YXS3Axybq4hzh66qQX58anFBYnJqXmpJfGhjmZmpsZmoaHGBBUAAPq-JpM</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>METHOD FOR GROWING MONOCRYSTALS K2COXNI1-X(SO4)2.6H2O</title><source>esp@cenet</source><creator>Londar Taras Oleksandrovych ; Polovynko Ihor Ivanovych ; Koman Volodymyr Bohdanovych ; Rykhliuk Serhii Viktorovych</creator><creatorcontrib>Londar Taras Oleksandrovych ; Polovynko Ihor Ivanovych ; Koman Volodymyr Bohdanovych ; Rykhliuk Serhii Viktorovych</creatorcontrib><description>A method for growing monocrystals K2COXNI1-X(SO4)2.6H2O comprises the evaporation of precursor solution at room temperature.
Способ выращивания монокристаллов K2COXNI1-X(SO4)2.6H2O включает выпаривание исходного раствора при комнатной температуре.
Спосіб вирощування монокристалів K2CoxNi1-x(SO4)2·6H2O включає випаровування вихідного розчину при кімнатній температурі.</description><language>eng ; rus ; ukr</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; CHEMISTRY ; CRYSTAL GROWTH ; METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>2012</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20120110&DB=EPODOC&CC=UA&NR=66536U$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20120110&DB=EPODOC&CC=UA&NR=66536U$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Londar Taras Oleksandrovych</creatorcontrib><creatorcontrib>Polovynko Ihor Ivanovych</creatorcontrib><creatorcontrib>Koman Volodymyr Bohdanovych</creatorcontrib><creatorcontrib>Rykhliuk Serhii Viktorovych</creatorcontrib><title>METHOD FOR GROWING MONOCRYSTALS K2COXNI1-X(SO4)2.6H2O</title><description>A method for growing monocrystals K2COXNI1-X(SO4)2.6H2O comprises the evaporation of precursor solution at room temperature.
Способ выращивания монокристаллов K2COXNI1-X(SO4)2.6H2O включает выпаривание исходного раствора при комнатной температуре.
Спосіб вирощування монокристалів K2CoxNi1-x(SO4)2·6H2O включає випаровування вихідного розчину при кімнатній температурі.</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>CHEMISTRY</subject><subject>CRYSTAL GROWTH</subject><subject>METALLURGY</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2012</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDD1dQ3x8HdRcPMPUnAP8g_39HNX8PX383cOigwOcfQJVvA2cvaP8PM01I3QCPY30TTSM_Mw8udhYE1LzClO5YXS3Axybq4hzh66qQX58anFBYnJqXmpJfGhjmZmpsZmoaHGBBUAAPq-JpM</recordid><startdate>20120110</startdate><enddate>20120110</enddate><creator>Londar Taras Oleksandrovych</creator><creator>Polovynko Ihor Ivanovych</creator><creator>Koman Volodymyr Bohdanovych</creator><creator>Rykhliuk Serhii Viktorovych</creator><scope>EVB</scope></search><sort><creationdate>20120110</creationdate><title>METHOD FOR GROWING MONOCRYSTALS K2COXNI1-X(SO4)2.6H2O</title><author>Londar Taras Oleksandrovych ; Polovynko Ihor Ivanovych ; Koman Volodymyr Bohdanovych ; Rykhliuk Serhii Viktorovych</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_UA66536UU3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; rus ; ukr</language><creationdate>2012</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>CHEMISTRY</topic><topic>CRYSTAL GROWTH</topic><topic>METALLURGY</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>Londar Taras Oleksandrovych</creatorcontrib><creatorcontrib>Polovynko Ihor Ivanovych</creatorcontrib><creatorcontrib>Koman Volodymyr Bohdanovych</creatorcontrib><creatorcontrib>Rykhliuk Serhii Viktorovych</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Londar Taras Oleksandrovych</au><au>Polovynko Ihor Ivanovych</au><au>Koman Volodymyr Bohdanovych</au><au>Rykhliuk Serhii Viktorovych</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHOD FOR GROWING MONOCRYSTALS K2COXNI1-X(SO4)2.6H2O</title><date>2012-01-10</date><risdate>2012</risdate><abstract>A method for growing monocrystals K2COXNI1-X(SO4)2.6H2O comprises the evaporation of precursor solution at room temperature.
Способ выращивания монокристаллов K2COXNI1-X(SO4)2.6H2O включает выпаривание исходного раствора при комнатной температуре.
Спосіб вирощування монокристалів K2CoxNi1-x(SO4)2·6H2O включає випаровування вихідного розчину при кімнатній температурі.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng ; rus ; ukr |
| recordid | cdi_epo_espacenet_UA66536UU |
| source | esp@cenet |
| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | METHOD FOR GROWING MONOCRYSTALS K2COXNI1-X(SO4)2.6H2O |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-06T04%3A54%3A37IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Londar%20Taras%20Oleksandrovych&rft.date=2012-01-10&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUA66536UU%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |