method for producing microcrystals from the solid solution InxGa1-xAs

A method for producing microcrystals from the solid solution InxGa1-xAs includes vacuum pumping deposition chamber volume, in which substrate, the sources of indium, arsenic, gallium, transport gas are placed, and heating. HCl is used as a transport gas. Sealed quartz ampoule is used as the depositi...

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Hauptverfasser:	Shuryhin Fedir Mykhailovych, Makido Olena Yuriivna, Voroshylo Halyna Ivanivna, Bolshakova Inesa Antonivna, Stetsko Roman Mykhailovych, Kost Yaroslav Yaroslavovych
Format:	Patent
Sprache:	eng ; rus ; ukr
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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