A METHOD FOR OBTAINING nAlGa s-pAlGaAs-p+AlGaAs HETEROSTRUCTURE WITH A VARIBAND ACTIVE REGION

A method for obtaining of nAlGaAs-pAlGaAs-pAlGaAs heterostructure with a variband active region according to two-stage technology of liquid-phase epitaxy comprises: at the first stage - formation of a buffer layer, and at the second - formation of p-n-junction in the said layer. Способ получения гет...

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Hauptverfasser:	SYVOROTKA NATALIIA YAROSLAVIVNA, VAKIV MYKOLA MYKHAILOVYCH, KRUKOVSKYI SEMEN IVANOVYCH
Format:	Patent
Sprache:	eng ; rus ; ukr
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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