METHOD FOR ZnS SEMICONDUCTOR CRYSTALS OF n-TYPE OBTAINING

A method for ZnS semiconductor crystals of n-type obtaining, in which two-temperature ZnS crystal annealing is carried at the temperature of T = (1170+- 3) K at the partial pressure of zinc vapour of PZn = (1.101 - 2.105) Pa.

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Bibliographische Detailangaben
Hauptverfasser:	FREIK DMYTRO MYKHAILOVYCH, BABUSCHAK HALINA YAROSLAVIVNA
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	A method for ZnS semiconductor crystals of n-type obtaining, in which two-temperature ZnS crystal annealing is carried at the temperature of T = (1170+- 3) K at the partial pressure of zinc vapour of PZn = (1.101 - 2.105) Pa.