METHOD FOR FORMING OF GATE IN MICROWAVE TRANSISTOR

The method of forming a submicron gate of microwave transistors consists in implementation of a groove in working n-layer of a semiconductor plate that has dimensions, which determine by pinch-off voltage and saturation current. Then the groove is metallized; and the surface of plates is passivated....

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Bibliographische Detailangaben
Hauptverfasser:	LARKIN SERHII YURIIOVYCH, KOSTIUKEVYCH SERHII OLEKSANDROVYCH, VORONKO ANDRII OLEKSANDROVYCH
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	The method of forming a submicron gate of microwave transistors consists in implementation of a groove in working n-layer of a semiconductor plate that has dimensions, which determine by pinch-off voltage and saturation current. Then the groove is metallized; and the surface of plates is passivated. The gate groove is made using probe nanolithography method.