UNIJUNCTION PHOTOTRANSISTOR

The proposed unijunction phototransistor contains a semiconductor substrate with n-type conductivity, an emitter p-n junction, and an additional are with n-type conductivity.

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Bibliographische Detailangaben
Hauptverfasser:	NYKYFOROV STANISLAV MYKOLAIOVYCH, KURMASHEV SHAMIL DZHAMASHEVYCH, PANFILOV MAKSYM IVANOVYCH, VIKULIN IVAN MYKHAILOVYCH
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	The proposed unijunction phototransistor contains a semiconductor substrate with n-type conductivity, an emitter p-n junction, and an additional are with n-type conductivity.