A METHOD FOR INCREASING THE RADIATION RESISTANCE OF SINGLE CRYSTAL SILICON

A method for increasing the radiation resistance of single crystal silicon against high-energy gamma and electron radiation includes additional doping with an impurity of tin. A single crystal of silicon is placed in a mold in the form of a parallelepiped made of cardboard, where a prepared solution...

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Hauptverfasser:	Lunov Serhii Valentynovych, Masliuk Volodymyr Trokhymovych, Tsyz Andrii Ihorovych
Format:	Patent
Sprache:	eng ; ukr
Online-Zugang:	Volltext bestellen
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