A METHOD FOR PREPARING MONOCRYSTALS OF AGGAGES4

A method for preparing monocrystals of AgGaGeS4, in which method preliminary performed are: batch synthesis of 2-3 g of alloys of a stochiometric composition of AgGaGeS4 during 10-15 minutes, rotation of ampoules with alloys during 45-50 hours at 1220-1270 K and cooling thereof to the room temperatu...

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Hauptverfasser:	PANKEVYCH VOLODYMYR ZINOVIIOVYCH, SHPAK ANATOLII PETROVYCH, VOLKOV SERHII VASYLIOVYCH, KHARKOVA LIUDMYLA BORYSIVNA, PARASIUK OLEH VASYLIOVYCH, PISKACH LIUDMYLA VASYLIVNA, OLEKSEIUK IVAN DMYTROVYCH, PEKHNO VASYL IVANOVYCH, UVAROV VIKTOR MYKOLAIOVYCH, YURCHENKO OKSANA MYKOLAIVNA
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	A method for preparing monocrystals of AgGaGeS4, in which method preliminary performed are: batch synthesis of 2-3 g of alloys of a stochiometric composition of AgGaGeS4 during 10-15 minutes, rotation of ampoules with alloys during 45-50 hours at 1220-1270 K and cooling thereof to the room temperature at the rate of 40-50 K/hour for the forced homogenization of alloys, grinding thereof to the powdered state, overloading the charge to the growth ampoule, obtaining homogeneous fusion from them at 1220-1270 K, crystallization of 4-5 mm of fusion and ageing thereof for 90-110 hours for obtaining crystal seed, fusing 2-3 mm of seed, building up monocrystal on the seed.