Process for the production of doped silicon single crystals by electron-beam float zoning and inlet valve FOR realization thereof

The invention relates to the field of metallurgy and can be used to obtain doped silicon single crystals. The process consists in melting of zone of the initial rod by an adjusting electron beam and supplying of the doping agent into the melting vacuumized chamber. Supplying of the doping agent is c...

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Bibliographische Detailangaben

Hauptverfasser:	Statkevych Ihor Ivanovych, Baranskyi Petro Ivanovych, Piskun Nataliia Vasylivna, Babych Vilyk Maksymovych, Asnis Yukhym Arkadiiovych
Format:	Patent
Sprache:	eng ; rus ; ukr
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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