Argon heating system for crystal growth chamber

Argon heating system for crystal growth chamber

An argon heating system for crystal growth chamber is provided. Before inputted into the crystal growth chamber, argon gas is heated by an argon heating box. By reducing the temperature difference between the inputted argon gas and the argon gas above the silicon melt, the temperature fluctuation an...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: LAI, CHIEN-HUNG, LU, HUNG-LIN
Format: Patent
Sprache:chi ; eng
Schlagworte:
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
CHEMISTRY
CRYSTAL GROWTH
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:An argon heating system for crystal growth chamber is provided. Before inputted into the crystal growth chamber, argon gas is heated by an argon heating box. By reducing the temperature difference between the inputted argon gas and the argon gas above the silicon melt, the temperature fluctuation and instability of the argon gas could be improved. Therefore, the defects of the grown ingot could be reduced. In addition, the impurities could be removed unobstructedly and the quantity thereof fallen to the silicon melt can be reduced. Furthermore, it is energy saving for the heater of crystal growth chamber.