A structure of ohm contact layer on molybdenum electrode of thin film solar cell

A high efficiency device structure of the compound thin film solar cell, the molybdenum (Mo) back contact / absorption layer interface having a thickness in the range 100 nm to 250 nm of molybdenum diselenide (MoSe2) layer, the band gap of MoSe2 is wider than that of the CIGS absorber layer, such that a back surface field (BSF) comprising an MoSe2 layer can hinder the recombination of electrons and holes. In addition, the resistance of the MoSe2 layer rendering it a poor conductor; excessively thick MoSe2 layers can adversely affect the performance of CIGS solar cells. Optimizing the thickness of the MoSe2 layer could facilitate the formation of a CIGS chalcopyrite phase during the selenization process. Optimizing the thickness of the MoSe2 layer enhance cell efficiency of a compound thin film solar cells. The invention relates to a simple way of controlling compound solar cell generates MoSe2 Mo back electrode layer thickness, comprising the Mo back electrode by changing the sputtering power and the type of