Power switch device

A power switch device is disclosed. The power switch device includes a substrate, a first transistor, and a second transistor. The substrate has a first pad, a second pad, and a third pad. The first transistor has a first surface and a second surface. A source of the first transistor is formed on the first surface of the first transistor. The second transistor is a laterally diffused metal oxide semiconductor (LDMOS) field-effect transistor. The second transistor has a first surface and a second surface. A drain of the second transistor is formed on the first surface of the second transistor. The second surface of the first transistor is coupled to the first pad, the second surface of the second transistor is coupled to the second pad, and the third pad is coupled to the source of the first transistor and the drain of the second transistor.