Atom trapping chips with double layer of metal wire patterns and the heat dissipation device

This invention relates to the atom trapping chips with double layer of metal wire patterns and the heat dissipation device. The characteristic of the device is to use the heat dissipation electroplated copper blocks located in the lower layer of the atom trapping chips. The purpose of this copper block is to conduct the heat generated from the upper metal wire to the substrate efficiently to improve the heat dissipation rate. Thus, the current carrying capability of the metal wires in the upper layer can be improved substantially. In addition, the photoresist has chosen as the insulating layer in between the two layers of metal wires on atom trapping chips. The photoresist is not only good for being the electrical insulator but also has the low outgassing rate after baking in the ultra-high vacuum environment. It can also be grinded and polished to a specific thickness. Thus, we can precisely control the thickness of this insulator. In general, some of the atom trapping chips is required to reflect the laser