Integrated laser voltage probe pad of an integrated circuit block or of a semiconductor circuit block for measuring dc or low frequency ac electrical parameters with laser based optical probing techniques

A semiconductor or integrated circuit block (104) including a sense node (126) and a converter circuit (130), in which the sense node (126) develops a low frequency electrical parameter that is constant or varies at a frequency below a predetermined frequency level, and in which the converter circuit (130) converts the low frequency electrical parameter into an alternating electrical parameter having a frequency at or above the predetermined frequency level sufficient to modulate a laser beam (108) focused within a laser probe area (114) of the converter circuit (130). The converter (130) may include a ring oscillator, a switch circuit controlled by a clock enable signal, a capacitor having a charge rate based on the low frequency electrical parameter, etc. The laser probe area (114) has a frequency level based on a level of the low frequency electrical parameter to modulate the reflected laser beam (116) for measurement of the electrical parameter by a laser voltage probe test system (102).