SEMICONDUCTOR WAFER AND METHOD OF MANUFACTURING THE SAME

The present invention provides a semiconductor wafer and a method of manufacturing the same. Said semiconductor wafer comprises: a substrate, the material of which is silicon carbide; a channel layer, which is configured above the substrate; a lattice matching layer, which is configured between the substrate and the channel layer; and a barrier layer, which is configured above the channel layer; wherein the diameter of the semiconductor wafer is greater than 6 inches. The advantages of the semiconductor wafer and its manufacturing method provided herein is that, by replacing the conventional buffer layer with a relatively thin lattice matching layer between the substrate and the channel layer, not only the problem of lattice mismatch between layers of different materials can be solved, but the stress of structure can also be reduced or eliminated. Furthermore, the "slip lines" issue can be avoided, thereby allowing the manufacture of large-sized semiconductor wafers (for example, with a diameter above 6 inche