Coatings with diffusion barriers for corrosion and contamination protection

Exemplary methods of semiconductor processing are described. The methods are developed to increase corrosion resistance to a substrate, such as a metal substrate. The methods include forming a first oxygen-containing material on a substrate. The first oxygen-containing material may be or include silicon oxide, yttrium oxide, or aluminum oxide. The methods may include forming a barrier layer on the first oxygen-containing material. The methods may include forming a second oxygen-containing material on the barrier layer. The second oxygen-containing material may be or include silicon oxide, yttrium oxide, or aluminum oxide.