N-type sic single crystal substrate

N-type sic single crystal substrate

An 8 inch n-type SiC single crystal substrate of an embodiment has a diameter in the range of 195 to 205mm, a thickness in the range of 300 µm to 650 µm, thicknesses of work-affected layers on both the front and back sides are 0.1 nm or less, and the dopant concentration is 2 × 1018/cm3 or more and...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
1. Verfasser: SHONAI, TOMOHIRO
Format: Patent
Sprache:chi ; eng
Schlagworte:
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
CHEMISTRY
CRYSTAL GROWTH
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:An 8 inch n-type SiC single crystal substrate of an embodiment has a diameter in the range of 195 to 205mm, a thickness in the range of 300 µm to 650 µm, thicknesses of work-affected layers on both the front and back sides are 0.1 nm or less, and the dopant concentration is 2 × 1018/cm3 or more and 6 × 1019/cm3 or less at least five arbitrarily selected points in the plane within 5% of the thickness of the substrate in the depth direction from the main surface of the substrate.