TWI853105B

The present invention provides: a composition for chemical mechanical polishing, said composition increasing the polishing rate ratio of a silicon nitride film to a silicon oxide film, while reducing the occurrence of dishing in the silicon nitride film; and a chemical mechanical polishing method.　A...

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Bibliographische Detailangaben
Hauptverfasser:	YOSHIO, KOUHEI, OKAMOTO, MASASHI, YAMADA, YUUYA, SUGIE, NORIHIKO
Format:	Patent
Sprache:	chi
Schlagworte:	ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS POLISHES POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH SEMICONDUCTOR DEVICES SKI WAXES
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Beschreibung
Zusammenfassung:	The present invention provides: a composition for chemical mechanical polishing, said composition increasing the polishing rate ratio of a silicon nitride film to a silicon oxide film, while reducing the occurrence of dishing in the silicon nitride film; and a chemical mechanical polishing method.　A composition for chemical mechanical polishing according to the present invention contains (A) silica abrasive grains having a functional group represented by general formula (1), and (B) a liquid medium; and the silica abrasive grains (A) satisfy the conditions (a) and (b) described below. (a) The zeta potential thereof in the composition for chemical mechanical polishing is less than -10 mV. (b) The silica abrasive grains are chained spherical grains, in each of which three or more particles are connected.　(1): -SO3 -M+ (In the formula, M+ represents a monovalent positive ion.)