Semiconductor device and method for manufacturing the same

A semiconductor device includes a substrate including a first trench that extends along a first lateral direction and a second trench that extends along a second lateral direction; a first metal layer filling each of the first and second trenches; a second metal layer filling each of the first and second trenches, and disposed above and electrically isolated from the first metal layer; a first via structure in electrical contact with first metal layer; and a second via structure in electrical contact with second metal layer. When viewed from the top, the first via structure and the second via structure are interposed between the first trench and the second trench along the first lateral direction. The first via structure and the second via structure are disposed immediately adjacent to each other along the second lateral direction.