Semiconductor structure and method for manufacturing the same

Semiconductor structure and method for manufacturing the same

An embodiment is a semiconductor structure. The semiconductor structure includes a substrate. A fin is on the substrate. The fin includes silicon germanium. An interfacial layer is over the fin. The interfacial layer has a thickness in a range from greater than 0 nm to about 4 nm. A source/drain reg...

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Bibliographische Detailangaben
Hauptverfasser: TAI, ROGER, HSU, TZU-HSIANG, LIU, DAVIE, LEE, YEN-RU, LIN, YAN-TING, TING, HENG-WEN, CHIN, CHIH-YUN, JENG, PEI-REN, LI, CHII-HORNG, LEE, CHIEN-WEI, SUNG, HSUEHANG
Format: Patent
Sprache:chi ; eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:An embodiment is a semiconductor structure. The semiconductor structure includes a substrate. A fin is on the substrate. The fin includes silicon germanium. An interfacial layer is over the fin. The interfacial layer has a thickness in a range from greater than 0 nm to about 4 nm. A source/drain region is over the interfacial layer. The source/drain region includes silicon germanium.