Image sensor and fabrication method thereof

In some embodiments, the present disclosure relates to a method for forming an image sensor and associated device structure. A backside deep trench isolation (BDTI) structure is formed in a substrate separating a plurality of pixel regions. The BDTI structure encloses a plurality of photodiodes and...

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Bibliographische Detailangaben
Hauptverfasser: HUNG, FENGI, HSU, HUNG-WEN, YAUNG, DUN-NIAN, KUO, WENANG, CHEN, HSIN-HUNG, LIU, JENNG, LIU, SHIHANG
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:In some embodiments, the present disclosure relates to a method for forming an image sensor and associated device structure. A backside deep trench isolation (BDTI) structure is formed in a substrate separating a plurality of pixel regions. The BDTI structure encloses a plurality of photodiodes and comprising a first BDTI component arranged at a crossroad of the plurality of pixel regions and a second BDTI component arranged at remaining peripheries of the plurality of pixel regions. The first BDTI component has a first depth from a backside of the substrate smaller than a second depth of the second BDTI component.