TWI848367B

An IGZO sputtering target with high relative density while suppressing increase in arcing and particle during sputtering is provided. An IGZO sputtering target includes indium (In), gallium (Ga), zinc (Zn), zirconium (Zr), and oxygen (O), the rest consisting of inevitable impurities, wherein the IGZ...

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Bibliographische Detailangaben
Hauptverfasser:	OSADA, KOZO, MURAI, KAZUTAKA
Format:	Patent
Sprache:	chi
Schlagworte:	ARTIFICIAL STONE CEMENTS CERAMICS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS CONCRETE DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL LIME, MAGNESIA METALLURGY REFRACTORIES SLAG SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TREATMENT OF NATURAL STONE
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Beschreibung
Zusammenfassung:	An IGZO sputtering target with high relative density while suppressing increase in arcing and particle during sputtering is provided. An IGZO sputtering target includes indium (In), gallium (Ga), zinc (Zn), zirconium (Zr), and oxygen (O), the rest consisting of inevitable impurities, wherein the IGZO sputtering target includes Zr at less than 20 mass ppm and has a relative density is 95% or more.