Method and device for predicting post-processing defects of wafer
Embodiments of the present invention provide a method and device for predicting post-processing defects of a wafer. The method includes: obtaining a first wafer, and determining a first statistical characteristic of a characteristic value of the first wafer before the first wafer is processed; obtai...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | Embodiments of the present invention provide a method and device for predicting post-processing defects of a wafer. The method includes: obtaining a first wafer, and determining a first statistical characteristic of a characteristic value of the first wafer before the first wafer is processed; obtaining a plurality of defects of the first wafer after the first wafer is processed; determining a specific correlation between the first statistical characteristic and the plurality of defects according to the first statistical characteristic corresponding to the first wafer and a statistical threshold; obtaining a second wafer corresponding to the first wafer, and determining a second statistical characteristic of a characteristic value of the second wafer before the second wafer is processed; and predicting a number of post-processing defects of the second wafer corresponding to the statistical threshold based on the second statistical characteristic and the specific correlation. |
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