TWI844268B

The invention provides an epitaxial growth equipment restarting method, and belongs to the technical field of semiconductor manufacturing. The restarting method of the epitaxial growth equipment comprises the following steps: injecting hydrogen into a reaction cavity arranged in the epitaxial growth equipment and purging the hydrogen for a preset time; placing a wafer on a base in the reaction cavity; etching gas is introduced into the reaction cavity at the first temperature, the flow is 15 SLM to 20 SLM, and the duration time is 30 s to 40 s; silicon source gas is introduced into the reaction cavity at the second temperature, the flow ranges from 20 SLM to 30 SLM, and the duration time ranges from 40 s to 60 s; after the epitaxial wafer is grown, the minority carrier MCLT of the epitaxial wafer is measured, and when the MCLT reaches a preset value, restarting of the epitaxial growth equipment is completed. According to the technical scheme, the productivity of the epitaxial wafer can be improved.