TWI842954B

The present invention provides a composition for chemical mechanical polishing and a method of chemical mechanical polishing, which can perform high-speed and flat polishing on a to-be-polished surface where conductive metals such as tungsten and cobalt and an insulating film such as silicon oxide f...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	OKAMOTO, MASASHI, YAMADA, YUUYA, SUGIE, NORIHIKO
Format:	Patent
Sprache:	chi
Schlagworte:	ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DRESSING OR CONDITIONING OF ABRADING SURFACES DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS PERFORMING OPERATIONS POLISHES POLISHING POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH SEMICONDUCTOR DEVICES SKI WAXES TRANSPORTING
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Beschreibung
Zusammenfassung:	The present invention provides a composition for chemical mechanical polishing and a method of chemical mechanical polishing, which can perform high-speed and flat polishing on a to-be-polished surface where conductive metals such as tungsten and cobalt and an insulating film such as silicon oxide film coexist. The present invention can reduce surface defects after polishing. The composition for chemical mechanical polishing of the present invention contains: (A) silica particles modified with a compound having two or more amine groups and (B) a liquid medium, when the total mass of the composition for chemical mechanical polishing is set to be 100% by mass, the content of the component (A) is 0.1% by mass or more and 10% by mass or less.