Semiconductor arrangement and forming method thereof and semiconductor structure

An exemplary semiconductor structure includes a device substrate having a first side and a second side. A dielectric layer is disposed over the first side of the device substrate. A through via extends along a first direction through the dielectric layer and through the device substrate from the fir...

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Bibliographische Detailangaben
Hauptverfasser: LIN, CHING-PIN, LI, CHENGIEN, CHUANG, YAOUN, KU, MIN-FENG
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:An exemplary semiconductor structure includes a device substrate having a first side and a second side. A dielectric layer is disposed over the first side of the device substrate. A through via extends along a first direction through the dielectric layer and through the device substrate from the first side to the second side. The through via has a total length along the first direction and a width along a second direction that is different than the first direction. The total length is a sum of a first length of the through via in the dielectric layer and a second length of the through via in the device substrate. The first length is less than the second length. A guard ring is disposed in the dielectric layer and around the through via.