TWI840154B

The subject of the present invention is to provide a semiconductor device having an excellent adhesion between a sealing material and an interlayer insulating film in a rewiring layer, and a manufacturing method thereof. The semiconductor device (1) of the present invention comprises: a semiconducto...

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Bibliographische Detailangaben
Hauptverfasser:	SHIMIZU, TAKEKI, SASAKI, TAKAHIRO, FUJIWARA, AKIRA, SHIOSAKI, SHUJIRO, YORISUE, TOMOHIRO, NAKAMURA, MITSUTAKA, OGURA, TOMOHITO, YOSHIDA, MASAHIKO
Format:	Patent
Sprache:	chi
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMISTRY COMPOSITIONS BASED THEREON ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS METALLURGY ORGANIC MACROMOLECULAR COMPOUNDS SEMICONDUCTOR DEVICES THEIR PREPARATION OR CHEMICAL WORKING-UP
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Beschreibung
Zusammenfassung:	The subject of the present invention is to provide a semiconductor device having an excellent adhesion between a sealing material and an interlayer insulating film in a rewiring layer, and a manufacturing method thereof. The semiconductor device (1) of the present invention comprises: a semiconductor chip (2); a sealing material (3) covering the semiconductor chip; and a rewiring layer (4) having an area larger than the semiconductor chip in a top view, wherein i-ray transmittance of the interlayer insulating film (6) of the rewiring layer is 80% or less. According to the present invention, provided are the semiconductor device having an excellent adhesion between the sealing material and the interlayer insulating film in the rewiring layer, and the manufacturing method thereof.