TWI837859B
The present invention discloses a gas barrier material comprising at least one barrier layer unit consisting of an organic layer, an aluminum nitride layer, and a silicon oxide layer stacked in sequence. The organic layer contains a silicon-containing component formed by hydrolysis and condensation...
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Format: | Patent |
Sprache: | chi |
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Zusammenfassung: | The present invention discloses a gas barrier material comprising at least one barrier layer unit consisting of an organic layer, an aluminum nitride layer, and a silicon oxide layer stacked in sequence. The organic layer contains a silicon-containing component formed by hydrolysis and condensation of silicon-containing reactants. The silicon-containing reactants are at least one selected from the siloxane compounds and the silane compounds with alkoxy groups. The aluminum nitride layer contains nitrogen more than 0at% and less than 15at%, oxygen more than 40at% and less than 65at%, and aluminum more than 35at% and less than 60at%. The silicon oxide layer has a ratio range of silicon and oxygen in atomic percentage from 0.55 to 0.9. By combining the organic layer, the aluminum nitride layer, and the silicon oxide layer, especially the content ratios of nitrogen, oxygen, and aluminum in the aluminum nitride layer, and content ratios of silicon and oxygen in the silicon oxide layer, the gas barrier material can |
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