TWI837462B

The Cu-W-O sputtering target of the present invention is composed of tungsten (W), copper (Cu), oxygen (O), and inevitable impurities, and the volume resistivity is 1.0x103 [Omega].cm or less. The oxide thin film of the present invention is composed of tungsten (W), copper (Cu), oxygen (O), and inev...

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Hauptverfasser: OSADA, KOZO, MUNEYASU, KEI, NARA, ATSUSHI
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creator OSADA, KOZO
MUNEYASU, KEI
NARA, ATSUSHI
description The Cu-W-O sputtering target of the present invention is composed of tungsten (W), copper (Cu), oxygen (O), and inevitable impurities, and the volume resistivity is 1.0x103 [Omega].cm or less. The oxide thin film of the present invention is composed of tungsten (W), copper (Cu), oxygen (O), and inevitable impurities, and the ratio of the content of W to Cu, in terms of atomic ratio, is 0.5 ≤ W/(Cu+W) < 1. An object of the present invention is to provide a sputtering target that can form a film with a high work function and has a low volume resistivity.
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The oxide thin film of the present invention is composed of tungsten (W), copper (Cu), oxygen (O), and inevitable impurities, and the ratio of the content of W to Cu, in terms of atomic ratio, is 0.5 ≤ W/(Cu+W) &lt; 1. An object of the present invention is to provide a sputtering target that can form a film with a high work function and has a low volume resistivity.</description><language>chi</language><subject>ARTIFICIAL STONE ; CEMENTS ; CERAMICS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS ; CONCRETE ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; LIME, MAGNESIA ; METALLURGY ; REFRACTORIES ; SLAG ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; TREATMENT OF NATURAL STONE</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20240401&amp;DB=EPODOC&amp;CC=TW&amp;NR=I837462B$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20240401&amp;DB=EPODOC&amp;CC=TW&amp;NR=I837462B$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>OSADA, KOZO</creatorcontrib><creatorcontrib>MUNEYASU, KEI</creatorcontrib><creatorcontrib>NARA, ATSUSHI</creatorcontrib><title>TWI837462B</title><description>The Cu-W-O sputtering target of the present invention is composed of tungsten (W), copper (Cu), oxygen (O), and inevitable impurities, and the volume resistivity is 1.0x103 [Omega].cm or less. 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subjects ARTIFICIAL STONE
CEMENTS
CERAMICS
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS
CONCRETE
DIFFUSION TREATMENT OF METALLIC MATERIAL
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
LIME, MAGNESIA
METALLURGY
REFRACTORIES
SLAG
SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
TREATMENT OF NATURAL STONE
title TWI837462B
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