TWI837462B

The Cu-W-O sputtering target of the present invention is composed of tungsten (W), copper (Cu), oxygen (O), and inevitable impurities, and the volume resistivity is 1.0x103 [Omega].cm or less. The oxide thin film of the present invention is composed of tungsten (W), copper (Cu), oxygen (O), and inev...

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Bibliographische Detailangaben
Hauptverfasser:	OSADA, KOZO, MUNEYASU, KEI, NARA, ATSUSHI
Format:	Patent
Sprache:	chi
Schlagworte:	ARTIFICIAL STONE CEMENTS CERAMICS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS CONCRETE DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL LIME, MAGNESIA METALLURGY REFRACTORIES SLAG SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TREATMENT OF NATURAL STONE
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Beschreibung
Zusammenfassung:	The Cu-W-O sputtering target of the present invention is composed of tungsten (W), copper (Cu), oxygen (O), and inevitable impurities, and the volume resistivity is 1.0x103 [Omega].cm or less. The oxide thin film of the present invention is composed of tungsten (W), copper (Cu), oxygen (O), and inevitable impurities, and the ratio of the content of W to Cu, in terms of atomic ratio, is 0.5 ≤ W/(Cu+W) < 1. An object of the present invention is to provide a sputtering target that can form a film with a high work function and has a low volume resistivity.