TWI836802B

TWI836802B

Provided are a silicon wafer suitable for use of IGBT, having high resistance, so that resistance fluctuation is small, and capable of inhibiting the occurrence of slip, and a method for manufacturing the silicon wafer. The silicon wafer of the present invention has a high oxygen concentration area...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: MAEDA, MANABU, FUJISE, JUN
Format: Patent
Sprache:chi
Schlagworte:
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
CHEMISTRY
CRYSTAL GROWTH
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:Provided are a silicon wafer suitable for use of IGBT, having high resistance, so that resistance fluctuation is small, and capable of inhibiting the occurrence of slip, and a method for manufacturing the silicon wafer. The silicon wafer of the present invention has a high oxygen concentration area where the oxygen concentration is greater than the oxygen concentration (ASTM F121,1979) of the silicon wafer by 1.5×10^17 atoms/㎤ or greater in an oxygen concentration profile in a direction of thickness of a silicon wafer, which is present only on a back surface layer, wherein an average oxygen concentration in the area from the outermost surface of the back of the silicon wafer to 10㎛ in the thickness direction is 4.0×10^17 atoms/㎤ or greater and 15.0×10^17 atoms/㎤ or less.