Thin-film storage transistor with ferroelectric storage layer
According to one embodiment of the present invention, a storage transistor has a tunnel dielectric layer and a charge-trapping layer between a channel region and a gate electrode, wherein the charge-tapping layer has a conduction band offset relative to a ntype silicon conduction band that is less t...
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| creator | CHIEN, WU-YI HENRY SAMACHISA, GEORGE HARARI, ELI PURAYATH, VINOD |
| description | According to one embodiment of the present invention, a storage transistor has a tunnel dielectric layer and a charge-trapping layer between a channel region and a gate electrode, wherein the charge-tapping layer has a conduction band offset relative to a ntype silicon conduction band that is less than the lowering of the tunneling barrier in the 10 tunnel dielectric layer when a programming voltage is applied, such that electrons direct tunnel into the charge-trapping layer. The conduction band offset of the charge-trapping layer is selected to have a value between -1.0 eV and 2.3 eV. |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INFORMATION STORAGE PHYSICS SEMICONDUCTOR DEVICES STATIC STORES |
| title | Thin-film storage transistor with ferroelectric storage layer |
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