Thin-film storage transistor with ferroelectric storage layer

Thin-film storage transistor with ferroelectric storage layer

According to one embodiment of the present invention, a storage transistor has a tunnel dielectric layer and a charge-trapping layer between a channel region and a gate electrode, wherein the charge-tapping layer has a conduction band offset relative to a ntype silicon conduction band that is less t...

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Bibliographische Detailangaben
Hauptverfasser: CHIEN, WU-YI HENRY, SAMACHISA, GEORGE, HARARI, ELI, PURAYATH, VINOD
Format: Patent
Sprache:chi ; eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Beschreibung
Zusammenfassung:According to one embodiment of the present invention, a storage transistor has a tunnel dielectric layer and a charge-trapping layer between a channel region and a gate electrode, wherein the charge-tapping layer has a conduction band offset relative to a ntype silicon conduction band that is less than the lowering of the tunneling barrier in the 10 tunnel dielectric layer when a programming voltage is applied, such that electrons direct tunnel into the charge-trapping layer. The conduction band offset of the charge-trapping layer is selected to have a value between -1.0 eV and 2.3 eV.