TWI833930B

TWI833930B

The present disclosure is directed to a dry etching method for a substrate having a silicon compound film, including: plasmatizing a dry etching agent; and etching the silicon compound film with the plasmatized dry etching agent through a mask formed with a predetermined opening pattern on the silic...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: OOMORI, HIROYUKI, FURUTANI, SHUNTA
Format: Patent
Sprache:chi
Schlagworte:
BASIC ELECTRIC ELEMENTS
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
DIFFUSION TREATMENT OF METALLIC MATERIAL
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
METALLURGY
MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:The present disclosure is directed to a dry etching method for a substrate having a silicon compound film, including: plasmatizing a dry etching agent; and etching the silicon compound film with the plasmatized dry etching agent through a mask formed with a predetermined opening pattern on the silicon compound film, wherein the dry etching agent contains the following first to fourth gases; the first gas is at least one compound selected from the group consisting of iodinated fluorocarbon compounds and brominated fluorocarbon compounds; the second gas is an unsaturated fluorocarbon represented by CnFm; the third gas is an unsaturated hydrofluorocarbon represented by CxHyFz; and the fourth gas is an oxidizing gas.