Apparatus for measuring overlay

An overlay measurement apparatus that can quickly measure an overlay error between layers with a large height difference is provided. The overlay measurement apparatus measures an error between a first overlay mark and a second overlay mark formed in a pair on different layers of a wafer. The overla...

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Bibliographische Detailangaben
Hauptverfasser:	PARK, JIN WOO, SHIN, HYEON GI, RYU, BO KYUNG, KO, JUNG SUN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS
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Beschreibung
Zusammenfassung:	An overlay measurement apparatus that can quickly measure an overlay error between layers with a large height difference is provided. The overlay measurement apparatus measures an error between a first overlay mark and a second overlay mark formed in a pair on different layers of a wafer. The overlay measurement apparatus includes an imaging system configured to acquire alignment images of a pair of first and second overlay marks at a plurality of focus positions, and a controller communicatively coupled to the imaging system. The overlay measurement apparatus can rapidly and accurately measure an overlay error between layers with a large height difference.