TWI832156B

A semiconductor device including a base substrate B, which includes wire layers, chips C1, C2, C3, C4, C5, and C6 provided on the base substrate B, and a protective film P provided on each of the side faces of the chips C1, C2, C3, C4, C5, and C6.

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Bibliographische Detailangaben
Hauptverfasser: MIGITA, TATSUO, YAMAMOTO, SUSUMU, SHIN, EIICHI, TOYOTA, GEN, HONGO, SATOSHI, FUJITA, TSUTOMU, TAKAHASHI, KAZUKI, MATSUSHIGE, HIDEKI, KATAMURA, YUKIO
Format: Patent
Sprache:chi
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Zusammenfassung:A semiconductor device including a base substrate B, which includes wire layers, chips C1, C2, C3, C4, C5, and C6 provided on the base substrate B, and a protective film P provided on each of the side faces of the chips C1, C2, C3, C4, C5, and C6.