TWI830033B

A semiconductor storage device includes a first conductive layer that extends in a first direction; a second conductive layer that extends in the first direction and is arranged with the first conductive layer in a second direction; a first insulating layer that is provided between the first conduct...

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Hauptverfasser: NARASAKI, RYOTA, OCHIAI, TAKAFUMI, HOANG, HA, KURUSU, TAKASHI, MATSUO, KAZUHIRO, MORI, SHINJI, TORATANI, KENICHIRO, KANEYAMA, JUNICHI, SAITO, YUTA, KAMIYA, YUTA, FUKUDA, NATSUKI, YAMASHITA, HIROYUKI, HONDA, SHOJI, TAKAHASHI, KOTA, ISHIMARU, TOMOKI
Format: Patent
Sprache:chi
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