TWI830033B

TWI830033B

A semiconductor storage device includes a first conductive layer that extends in a first direction; a second conductive layer that extends in the first direction and is arranged with the first conductive layer in a second direction; a first insulating layer that is provided between the first conduct...

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Bibliographische Detailangaben
Hauptverfasser: NARASAKI, RYOTA, OCHIAI, TAKAFUMI, HOANG, HA, KURUSU, TAKASHI, MATSUO, KAZUHIRO, MORI, SHINJI, TORATANI, KENICHIRO, KANEYAMA, JUNICHI, SAITO, YUTA, KAMIYA, YUTA, FUKUDA, NATSUKI, YAMASHITA, HIROYUKI, HONDA, SHOJI, TAKAHASHI, KOTA, ISHIMARU, TOMOKI
Format: Patent
Sprache:chi
Schlagworte:
ELECTRICITY
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Beschreibung
Zusammenfassung:A semiconductor storage device includes a first conductive layer that extends in a first direction; a second conductive layer that extends in the first direction and is arranged with the first conductive layer in a second direction; a first insulating layer that is provided between the first conductive layer and the second conductive layer; a semiconductor layer that extends in the second direction and faces the first conductive layer, the second conductive layer, and the first insulating layer in a third direction; a first charge storage layer that is provided between the first conductive layer and the semiconductor layer; a second charge storage layer that is provided between the second conductive layer and the semiconductor layer; a first high dielectric constant layer that is provided between the first conductive layer and the first charge storage layer; and a second high dielectric constant layer provided between the second conductive layer and the second charge storage layer. At least a portion of the f