Semiconductor structure enhanced for high voltage applications

A semiconductor structure enhanced for high-voltage applications is disclosed. The structure comprises a protruding wall structure, formed by etching a substrate, that extends from a base surface of the substrate. Corners of the protruding wall structure may be smoothed or rounded to reduce electric...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: VOIRON, FREDERIC, BUFFLE, LARRY
Format: Patent
Sprache:chi ; eng
Schlagworte:
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